PART |
Description |
Maker |
APT10SCD65KCT |
SiC Schottky Diodes
|
Microsemi
|
MSICSN05120 MSICSN05120E3 |
SiC Schottky Diodes
|
Microsemi
|
SCS112AG |
SiC Schottky Barrier Diodes
|
Rohm
|
IDW20G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
IDH03G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
IDH08G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
IDW16G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
IDH10G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
LSIC2SD120C08 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C
|
Littelfuse
|
RJS6005WDPK RJS6005WDPK-00T0 |
SiC Schottky Barrier Diode 600V - 30A - Diode SiC Schottky Barrier Diode
|
Renesas Electronics Corporation
|
BAT15-02L BAT15-02V BAT15-04W BAT15-05W BAT15 BAT1 |
Schottky Diodes - Silicon RF Schottky diode for DBS mixer applications up to 12 GHz RESISTOR,SMD1206,1K,1/4W,5% Silicon Schottky Diodes 硅肖特基二极
|
INFINEON[Infineon Technologies AG]
|
10-FZ06NBA110FP-M306L28 |
high speed IGBT with C6 MOSFET and SiC buck diodes
|
Vincotech
|